j. (x s.tis.11 u , line. 20 stern ave. springfield, new jersey 07081 u.s.a. npn silicon planar epitaxial transistors telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 bc182, a, b bc183, a, b, c bc184, b, c to-92 plastic package for lead free parts, device part # will be prefixed with "t" amplifier transistors absolute maximum ratings (ta=25c) description collector emitter voltage collector base voltage emitter base voltage collector current continuous power dissipation at ta=25c derate above 25c power dissipation at tc=25c derate above 25c operating and storage junction temperature range symbol vceo vcbo vebo ic pd pd tj. tstg bc182 bc183 50 30 60 45 bc184 30 45 6.0 100 350 2.8 1.0 8.0 -55 to +150 units v v v ma mw; mw/c w mw/c c thermal resistance junction to case junction to ambient in free air r(h (j-c) rth (j-a) 125 357 c/w c/w electrical characteristics (ta=25c unless specified otherwise) description collector emitter voltage collector base voltage emitter base voltage collector cut off current emitter cut off current symbol vceo vcbo vebo icbo iebo test condition lc=2ma, ib=0 bc182 bc183/bc184 lc=10na, ie=0 bc182 bc183/bc184 !e=100|ja, lc=0 vcb=50v, ie=0 bc182 vcb=30v, ie=0 bc183/184 veb=4v, lc=0 min 50 30 60 45 6.0 typ max 15 15 15 units v v v v v na na na quality semi-conductors
j. c/ , u na. 20 stern ave. springfield, new jersey 07081 usa. nrn s|l|con planar epitaxial transistors telephone: (973) 376-2922 (212)227-6005 bc182, a, b bc183, a, b, c bc184, b, c to-92 plastic package for lead free parts, device part # will be prefixed with electrical characteristics (ta=25c unless specified otherwise) description dc current gain collector emitter saturation voltage base emitter saturation voltage base emitter on voltage symbol hfe vce (sat> vbe (sat) vbe (on) test condition lc=10na,vce=5v bc182/183 bc184 lc=2ma, vce=5v bc182 bc183 bc184 lc=100ma, vce=5v bc182 bc183 bc184 lc=10ma, lb=0.5ma *lc=100ma, !b=5ma *lc=100ma, !b=5ma lc=100(ia. vce=5v lc=2ma, vce=5v lc=100ma, vce=5v win 40 100 120 120 240 80 80 130 0.55 typ 0.50 0.83 max 500 800 800 0.25 0.60 1.2 0.70 units v v v v v v small signal characteristics description transistors frequency output capacitance input capacitance small signal current gain noise figure symbol ft cob cib hfe nf test condition lc=0.5ma, vce=3v, f=100mhz bc182 bc183 bc184 lc=10ma, vce=5v, f=100mhz vcb=10v, ie=0, f=1mhz vbe=0.5v, lc=0, f=1mhz lc=2ma, vce=5v, f=1khz bc182 bc183 bc184 bc182a/bc183a BC182B/183b/184b bc183c/184c lc=0.2ma, vce=5v, rs=2 kq, f=30hz to 15khz bc184 lc=0.2ma, vce=5v, rs=2 kfi, f=1khz, f=200hz bc182/bc183 bc184 min 150 125 125 240 125 240 450 typ 100 120 140 > 8.0 max 5.0 500 900 900 260 500 900 4.0 10 4.0 units mhz mhz mhz mhz pf pf db db db
^eml-donctu.cto'i lpioduati, one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 bc182, a, b bc183, a, b, c bc184, b, c to-92 plastic package for lead free parts, device part # will be prefixed with "t" to-92 leaded plastic package f i .- g o c .? - , ^ o 11 cd 2= 11 co i_u ? b -*" 3 2 1 _i i f d^ g_^ u f -^ f ? -i ^j i ^ 1 . f i a .^ mold parting line secaa dim a b c d e f min 4.32 4.45 3.18 0.40 0.30 max 5.33 5.20 4.19 0.55 0.55 5 all dimensions are in mm quality semi-conductors dim g h k l m min 1.14 1.20 12.5 1.982 1.03 max \40 1.80 2.082 1.53 pin1 pin 2 pin 3 emitter base collector
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